1 transistor 2sA719, 2sa720 silicon pnp epitaxial planer type for low-frequency power amplification and driver amplification complementary to 2sc1317 and 2sc1318 n features l complementary pair with 2sc1317 and 2sc1318. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector 3:base jedec:toC92 eiaj:scC43a 5.0 0.2 4.0 0.2 5.1 0.2 13.5 0.5 0.45 +0.2 ?.1 0.45 +0.2 ?.1 1.27 1.27 2.3 0.2 2.54 0.15 2 13 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C30 C60 C25 C50 C5 C1 C500 625 150 C55 ~ +150 unit v v v a ma mw ?c ?c 2sA719 2sa720 2sA719 2sa720 n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance symbol i cbo v cbo v ceo v ebo h fe1 * h fe2 v ce(sat) v be(sat) f t c ob conditions v cb = C20v, i e = 0 i c = C10 m a, i e = 0 i c = C10ma, i b = 0 i e = C10 m a, i c = 0 v ce = C10v, i c = C150ma v ce = C10v, i c = C500ma i c = C300ma, i b = C30ma i c = C300ma, i b = C30ma v cb = C10v, i e = 50ma, f = 200mhz v cb = C10v, i e = 0, f = 1mhz min C30 C60 C25 C50 C5 85 40 typ C 0.35 C1.1 200 6 max C 0.1 340 C 0.6 C1.5 15 unit m a v v v v v mhz pf 2sA719 2sa720 2sA719 2sa720 * h fe1 rank classification rank q r s h fe1 85 ~ 170 120 ~ 240 170 ~ 340 free datasheet http://www.ndatasheet.com
2 transistor 2sA719, 2sa720 0 160 40 120 80 140 20 100 60 0 800 600 200 500 700 400 100 300 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 012 10 8 26 4 0 12 10 8 6 4 2 ta=25?c ?0.9ma ?0.8ma ?0.7ma ?0.6ma ?0.5ma ?0.4ma ?0.3ma ?0.2ma ?0.1ma i b =?.0ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 ?0 ? ? ? ? 0 ?00 ?00 ?00 ?00 ?00 ?00 ?00 ?00 v ce =?0v ta=25?c base current i b ( ma ) collector current i c ( ma ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.001 ?0.003 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 i c /i b =10 ta=75?c 25?c ?5?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( ma ) base to emitter saturation voltage v be(sat) ( v ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 0 600 500 400 300 200 100 v ce =?0v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 0 240 200 160 120 80 40 v cb =?0v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) ? ? ?0 ?0 ?00 0 50 40 30 20 10 45 35 25 15 5 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0 ?20 ?00 ?0 ?0 ?0 ?0 i c =?ma ta=25?c 2sa720 2sA719 base to emitter resistance r be ( k w ) collector to emitter voltage v cer ( v ) p c ta i c v ce i c i b v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb v cer r be free datasheet http://www.ndatasheet.com
3 transistor 2sA719, 2sa720 0 200 160 40 120 80 1 10 10 2 10 3 10 4 v ce =?0v ambient temperature ta ( ?c ) i ceo ( ta ) i ceo ( ta=25?c ) ?0.1 ? ?0 ?00 ?0.3 ? ?0 ?0.001 ?0.003 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 single pulse ta=25?c t=10ms t=1s i cp i c collector to emitter voltage v ce ( v ) collector current i c ( ma ) i ceo ta area of safe operation (aso) free datasheet http://www.ndatasheet.com
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